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3
V
E
I
B
I
C
I
E
V
C
V
B
120 kΩ
40 kΩ
12 V
2 kΩ
2 kΩ
+
−
v
i
R
1
R
f
v
o
A
I
REF
V
-
V
+
I
O
Q
2
Q
1
+
−
V
o
V
i
R
S
R
P
C
S
C
P
100 ( )
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2
3
1.
n
(intrinsic semiconductor)
(donor impurity)
!
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$
% !
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$
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n
()
*+
n
(,
+
-.
/0
1
23
-
4
2.
pn
45
(junction)
6
7
8
9:
;<
=
>?
@BA
C
+
;
+
DE
F
?
@
G
H
I
9:
;<
+
DJ
K
L
&M
N+
D
OP
/Q
R<
8
9
S
+
;
T
I
9U
V
+
D
(reverse-bias saturation current)
WX
P
/Q
RY
T
1
3.
Z
[
3
]^
6
7
(Zener diode)
+
_
`
ab
+
;
(breakdown voltage) V
Z
= 10 V
cd
I
o
e f
10 kΩ
8 V 10 kΩ
0.4 mA 0.5 mA 0.8 mA 1 mA
4
4.
g
6
7
(photodiode)
hi
g
6
7
(light-emitting diode
LED)
g
6
7
j
g
kl
m
+
k
&n
g
op
q<
g
6
7
r
F
7
s
-t
9+
D
D
S
LED
j
+
kl
m
g
k
LED
-
I
9
ab
+
;u
A
v
6
7
w
1
5.
Z
[
5
BJT
:
;
+
_
xy
'
BJT
z
{|
8
9
{}
~
(forward active mode)
+
D?
= 99
BE
45
S
+
;
V
BE(ON)
= 0.7 V
cd
V
B
e f
2.7 V 3 V
9 V 9.3 V
2
6.
BJT
q
7
W
(emitter follower)
7
+
D?
1
w
3
7.
?
(enhancement mode)n
MOSFET(NMOS)
+
;
(threshold voltage
V
T
)
|
L
7
(source
S)
h
7
(drain
D)
4u
w
.
/
-
n
7
(gate
G)
h
7
+
;
(
r¡
V
GS
)
¢
|
L
<
E
£
&
A
¤
¥t
l
¦
(inversion layer)
§
U
V¨
©
7
+
D
e
h
7
+
;
(
r¡
V
DS
)
ª
1
8.
«
7
BJT
7¬
®|
A
+
;
+
;?
|
1
¯
°?
|
1
4
9.
xy
A
n
S
±
JFET
² ³
+
;
(pinch-off voltage) V
P
= −4 V
´
7
+
D
I
DSS
= 16 mA
V
GS
= −1 V
cd
µ¶
JFET
§
U
V¨
-
V
DS
e f
6 V 5 V 4 V 3 V
1
10.
A
·¸
(depletion mode) NMOS
-
I
DSS
16 mA
V
T
−4 V
cd
V
GS
1 V
<
-
U
V
7
+
Df
25 mA 16 mA 12 mA 9 mA
4
11.
Z
[
11
NMOS
7
+
_
¹
}
A
º
+
D
:
;
`
S
»¼
(conduction parameter) k
n
= 1 mA/V
2
½
V
T
= 1 V
½
I
D
= 1 mA
½
R
D
= 3 k
¾
cd
V
DS
f
−4 V −1 V 1 V 4 V
2
12.
A
l
m¿
¼
H( j
ω
) =
2
j
1
1
ω
+
cd
ω
= 2 rad/sec
<
?
ef
3 dB −3dB 6 dB −6 dB
3
13.
À
Á
(operational amplifier
OPA)
-Â
Ã
ªÄ
+
D
L
ªÄ
ÅÆ
?
(differential gain)
ªÄ
2
14.
¯
°
(power amplifier)
A
Ç
(class-A)
-
:
;
+
D
ÈA
É
3
ÊË
Ì
B
Ç
(class-B)
-
:
;
+
D
S
4
3
ÊË
C
Ç
(class-C)
-
:
;
+
D
S
s|
A
ÊË
AB
Ç
(class-AB)
Í Î
Ï
-
:
;
+
D
S
Ð
|
A
ÊË
4
15.
Z
[
15
+
_
+
;?
Ñ
°Ò
¥
®
|
A
)
SÓ
Ì
Ñ
l
ÔÑ
°
(corner frequency)
SPS
C)RR(2
1
+π
w
Ñ
l
ÔÑ
°
PPS
C)R//R(2
1
π
(
Ñ
)
(midband)
?
PS
S
RR
R
+
1
16.
Z
[
16
-Õ
t
M
(noninverting amplifier)
xy
A
OPA
`
R
1
= 10 k
¾
R
f
= 30 k
¾
cd
+
;?
f
4 −4
3 −3
2
17.
Z
[
17
BJT
+
D
+
_
xy
Q
1
h
Q
2
M
N
+
D?
Ö
×
I
O
¢
|
f
2
1
I
REF
I
REF
2I
REF
4I
REF
1
18.
&
Ø
ÙÚ
ÛÜ
Ý
(
ÞA
Ù
+
;
ß
-
à
(series-shunt)
Ü
Ý
à
-
ß
(shunt-series)
Ü
Ý
ß
-
ß
(series-series)
Ü
Ý
à
-
à
(shunt-shunt)
Ü
Ý
4
19.
&
Ø
ÙÚ
ÛÜ
Ý
(
ÞA
Ù
-
áâ
+
D
½
áâ
+
;
ß
-
à
(series-shunt)
Ü
Ý
à
-
ß
(shunt-series)
Ü
Ý
ß
-
ß
(series-series)
Ü
Ý
à
-
à
(shunt-shunt)
Ü
Ý
4
20.
xy
+
;?
2
+
_
ß
4
5
ã
`ä
å
æ
*ç
è
¥
×
é
+
;?
f
3 7 10 32
1
21.
êë
A
ì
_
?
(loop gain)
Ìí
[
(Bode plot)
îï
Ù
ðñ
òó
ô
õ
ä
ö
º
M
÷
øù
(phase margin
PM)
−45º
M
÷
øù
45º
?
øù
(gain margin
GM)
6 dB
?
øù
2
ú
5
G
D
S
I
D
5 V
-5 V
R
D
15
16
17
11
+
−
+
−
V
CC
I
o
V
i
V
fb
5 V
-5 V
Vi
Vo
10 V
-10 V
X Y
Z
V
DD
3
22.
Z
[
22
OPA
+
_
îï
û
|
ÙÚ
ÛÜ
Ý
ß
-
à
(series-shunt)
Ü
Ý
à
-
ß
(shunt-series)
Ü
Ý
ß
-
ß
(series-series)
Ü
Ý
à
-
à
(shunt-shunt)
Ü
Ý
4
23.
A
ö
;
(regulator)
-
+
;
&ü
ç
<
8 V
·
ç
<
10 V
*ç
ö
;
°
(load regulation)
80 % 50 % 25 % 20 %
3
24.
A
ö
;
IC
-
â
LM7812
îï
ý
º
+
;
f
7 V 8 V 12 V −12 V
2
25.
A
ì
_
?
l
m¿
¼
ω
+
ω
+
ω
+
=ω
1000
j
1
100
j
1
10
j
1
10
)(T
5
îï
þ
>
7
ÿ
(dominant pole)
0 rad/sec 10 rad/sec 100 rad/sec 1000 rad/sec
1
26.
Z
[
26
ÈA
i
(Schmitt trigger)
+
_
+
;
l
m
o
îï
O
Vi = 6 V
<
Vo
-
e
f
−10 V
10 V
−5 V
5 V
3
27.
A
CMOS
t
M
(inverter)
-
*ç
+
C
L
= 1 pF
½
V
DD
= 5 V
½
Ñ
Ñ
°
100 kHz
cd
-
¯
°
f
1
W 2
W 2.5
W 5
W
4
28.
A
t
M
-w
+
;
V
IH
½
V
IL
M
¥
-
+
;
V
OL
h
V
OH
îï
÷
øù
(noise margin)
-
º
f
V
IH
− V
IL
V
OH
− V
OL
V
OH
− V
IH
V
IL
− V
OL
1
29.
A
ã
+
_
-
´
+
D
20 mA
¥
º
*ç
+
D
5 mA
+
¼
M
N
-
©
ã
xy
©
ã
2 mA
-+
D
cd
%
ã
+
_
´
(fanout)
¼
f
7 8 9 10
2
30.
Z
[
30
NMOS
+
_
À
Á
f
Z X Y
= +
Z X Y
= +
Z X Y
= ⋅
Z X Y
= ⋅
20
A
OPA
(a)
2
31
in
R
RR
R−=
10
(b)
1
i
o
R
v
i=
10
+
−
i
in
R
1
R
2
R
3
v
in +
−
R
in
A
+
−
R
2
R
1
R
1
R
2
v
i
R
L
i
o
A
(a) (b)
! " # $ % & ' (
(common-mode rejection ratio
CMRR)
) * + , -
./
(differential gain)
0
100 kHz
1
20 dB
2
20 kHz
3$%&./
(Common-mode
gain)
(
45
log 2 = 0.3)
20
20 dB
10kHz 150kHz
-20dB/dec
-40dB/dec
26
22
30